Table 1 SPICE parameters of the Schottky diode model used for waveform-selective metasurfaces.

Current at breakdown voltage

\(I_b\)

1.00\(\times 10^{-5}\) A

Saturation current

\(I_S\)

5.00\(\times 10^{-8}\) A

Emission coefficient

N

1.08

Ohmic series resistance

\(R_S\)

6 \(\Omega \)

Reverse breakdown voltage

\(V_B\)

7 V

Zero-bias capacitance

\(C_j\)

0.18 pF

Multiplier for multiple parallel diodes

M

0

Area junction contact potential

\(P_B\)

0.65 V

Energy gap for PN-junction

\(E_G\)

0.69 eV

Forward knee current

\(I_K\)

0 A/m\(^2\)

Reverse knee current

\(I_{KR}\)

0 A/m\(^2\)