Figure 7
The I–V characteristics for (a) Ag-, (b) Cu-, and (c) Ni-based contact PD under different incident power (365 nm). The I–T curves of the (d) Ag, and (e) Cu PD devices. (f) PD transient behavior for Ag, Cu, and Ni contact samples between ON and OFF states. (g) Power-dependent parameters of responsivity, detectivity, and photocurrent for different fabricated devices. (h) Microscopic image of the interdigitated Cu fingers on the CGO layer.
