Table 3 Specifications for fabricated PDs and comparison with other CGO-based UV-PDs. NS and HJ denote nanostructure and heterojunction, respectively.

From: Investigating various metal contacts for p-type delafossite α-CuGaO2 to fabricate ultraviolet photodetector

Sample

Structure

Idark (nA)/Bias (V)

Responsivity (mA/W)/Wavelength (nm)

Detectivity (Jones)

Rise/Decay time (s)

Photo to dark current ratio (PDCR)

Ref

CGO/ZnS

NS-HJ

3.5 × 10–3/5

 − /280–400

–/–

1.6

82

CGO NPs

NS

9.95 × 10+5/10

33/365

0.7/0.3

0.19

13

CGO:Zn NP/ZnO NW

NS-HJ

1.5 × 10+5/10

120/365

0.8/0.4

4.5

13

Au/CGO/Au

Thin film-MSM

2.76 × 10+5/ − 

80/UVC

~ 48/ ~ 59

1.02

41

CGO/β-Ga2O3

Thin film-HJ

− /0

 − /254, 365

< 0.5/ < 0.5

> 40

36

CGO:Cr NPs

NS

− /10

0.09/365

–/–

2

2

CGO:Cr/ZnO/Ag

NS-HJ

− /10

31/365

2.95/3.29

10

2

CGO:Mg/ZnO

NS-HJ

− /10

636/365

–/–

1.74

31

CGO:Zn/ZnO

NS-HJ

− /10

1340/365

–/–

6.03

31

Ni/S900/Ni

Thin film-MSM

1.71 × 10+3/5

3/365

1.49 × 109

23.1/25.7

2.5

This work

Cu/S900/Cu

Thin film-MSM

1.36/5

29/365

4.72 × 1011

1.8/5.9

3144

This work

Ag/S900/Ag

Thin film-MSM

670/5

85/365

6.37 × 1010

12.2/12.8

20

This work