Table 1 Final (calibrated) list of parameters.

From: A semi-empirical approach to calibrate simulation models for semiconductor devices

Parameter

Initial value

Calibrated value

Unit

\(a-Si(p^{+})\) doping

25,26

2.3e19

\({\rm cm}^{-3}\)

\(a-Si(n^{+})\) doping

25,26

5.75e18

\(\textrm{cm}^{-3}\)

SRV for silicon-Silver SRV for silicon-Aluminium

27

5.7e4

\(\textrm{cm}/\textrm{s}\)

Contact resistivity

28,29

8.9e-3

\(\Omega \textrm{cm}^{2}\)

\(D_{it}\) at c-Si - a-Si interface

30,31

1.2e11

\(\textrm{cm}^{-2}\)

Trap density states \(a-Si(n^{+})\)

32

9e18

\(\textrm{cm}^{-3}\)

TCO Complex refractive index

33

Supplementary information

 

TCO thickness

34,35

71.25

\(\textrm{nm}\)

Wafer resistivity

0.6–1.2 (Provided by manufacturer)

0.6312

\(\Omega \;\textrm{cm}\)

Bulk lifetime

3–7 (Provided by manufacturer)

3.3

\(\textrm{ms}\)