Table 1 Final (calibrated) list of parameters.
From: A semi-empirical approach to calibrate simulation models for semiconductor devices
Parameter | Initial value | Calibrated value | Unit |
|---|---|---|---|
\(a-Si(p^{+})\) doping | 2.3e19 | \({\rm cm}^{-3}\) | |
\(a-Si(n^{+})\) doping | 5.75e18 | \(\textrm{cm}^{-3}\) | |
SRV for silicon-Silver SRV for silicon-Aluminium | 5.7e4 | \(\textrm{cm}/\textrm{s}\) | |
Contact resistivity | 8.9e-3 | \(\Omega \textrm{cm}^{2}\) | |
\(D_{it}\) at c-Si - a-Si interface | 1.2e11 | \(\textrm{cm}^{-2}\) | |
Trap density states \(a-Si(n^{+})\) | 9e18 | \(\textrm{cm}^{-3}\) | |
TCO Complex refractive index | Supplementary information | ||
TCO thickness | 71.25 | \(\textrm{nm}\) | |
Wafer resistivity | 0.6–1.2 (Provided by manufacturer) | 0.6312 | \(\Omega \;\textrm{cm}\) |
Bulk lifetime | 3–7 (Provided by manufacturer) | 3.3 | \(\textrm{ms}\) |