Figure 1
From: In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers
(a) The Raman spectra of the graphene film grown directly on sapphire substrates. (b) The fabrication steps of the graphene IPGTs. (c) The SEM image of the device. (d) The transfer curve of the in-plane gate transistors measured under forward and reverse gate biases at \({V}_{\mathrm{DS}}\) = 0.5Â V.
