Figure 3
From: In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers
(a) The fabrication steps, (b) the SEM image and (c) transfer curve at VDS = 1.0 V of the IPGT with MoS2 beneath electrodes removed. The transfer curves of the other two MoS2/graphene IPGTs are also shown as colored lines in (c).
