Table 1 Comparison of this study with other stacked channel GAAFETs.
From: Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications
Device type of GAAFETs | Si stacked NS | Si stacked NWs | SiGe stacked NS (Current work) |
|---|---|---|---|
pFET13 | pFET14 | pFET | |
WNS or DNW | ~ 15 nm | 30 nm | 100 nm |
Gate length | 12 nm | 650 nm | 90 nm |
Normalization method | N/A | Perimeter of NWs | Footprint of NS |
Ion (μA/μm) | N/A | 550 | 790 |
Ion/Ioff | ~ 106 | ~ 106 | ~ 107 |
SS (mV/dec)* | 85 | 66 | 75 |
VD(V)/VG (V) | − 0.7/− 1.2 | − 1.2/− 1.5 | − 0.5/− 1.0 |
