Table 4 The calculated values for total dislocation density at void nucleation (\({\rho }_{V}^{N}\)), dislocation density at the peak number of voids (\({\rho }_{V}^{M}\)), loading stress at void nucleation (\({\sigma }_{V}^{N}\)), loading strain at void nucleation (\({\varepsilon }_{V}^{N}\)), loading stress at the peak number of voids (\({\sigma }_{V}^{M}\)), and loading strain at the peak number of voids (\({\varepsilon }_{V}^{M}\)), during uniaxial strain expansion of the various interface systems in the direction perpendicular (Z) to the interface.

From: Interface microstructure effects on dynamic failure behavior of layered Cu/Ta microstructures