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Figure 1

From: Non-volatile reconfigurable spin logic functions in a two-channel Hall bar by spin–orbit torque-based magnetic domains and directional read current

Figure 1

Sample schematic and magnetic characteristics of two-channel Hall bar. (a) Device stacks of substrate/W (2 nm)/CoFeB (1.1 nm)/MgO (1 nm)/TaOx (2 nm) layers with perpendicular magnetic anisotropy. (b) Optical images of the two-channel Hall bar device, highlighting the AHE voltage electrodes leveled by VH1 ~ VH4. (c) Plot of Hall voltage VH versus out-of-plane magnetic field (Hz). The black line represents the AHE voltage of Channel 1 (VH13), which was monitored by connecting VH1 and VH3 to a voltage meter, whereas the red line corresponds to the AHE voltage of Channel 2 (VH24). (d) Subtracted Hall voltage (Vs) versus out-of-plane magnetic field (Hz), defined as the difference between the AHE voltages in channels 1 and 2. The electrical circuit schematic for the measurement is shown in the lower part of Figures (c) and (d).

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