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Figure 1

From: M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes

Figure 1

Conduction band diagram and envelope wavefunctions of TB subbands for the three-well RP GaN THz-QCL design. The operating bias is 135 mV/period at 10 K. A tight-binding mode is applied at injection barrier between two adjacent periods. The thicknesses of the quantum well (GaN) and barrier (Al0.15Ga0.85N) for each period are 22.4/33.3/10/24.5/20/58.4 Å (barrier thicknesses in bold). The periodic sheet doping density is set to 6 × 1010 cm−2 with the 5-nm-wide doping in the middle of the widest well.

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