Figure 3
From: Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal
(a) Photograph of an obtained porous Ga oxide membrane. SEM images of (b) front and (c) back sides of the membrane. (d) Cross-sectional low-magnification SEM image of the membrane. The thickness of the membrane was 100 μm. High-magnification images of area around the surface of (e) front and (f) back sides of the membrane. Insets of (c) and (f) show high-magnification images of the bottom of the nanoholes.
