Figure 4
From: Formation of porous Ga oxide with high-aspect-ratio nanoholes by anodizing single Ga crystal
(a) Tilt angle of [100] direction of α-Ga from a direction perpendicular to a sample surface. The tilt angles were (A) 5° and (B) 44°. (b, c) Cross-sectional SEM images of porous Ga oxide obtained by anodizing Ga plates (A) and (B). Ga plates (A) and (B) were anodized in 1 M phosphoric acid solution at − 2 °C by applying a voltage of 80 V for 15 min. The tilt angles of the growth direction of nanoholes were (A) 1° and (B) 11°.
