Figure 3

Structure analysis of Si/Sn composite nanowires by TEM and EDX. Nanowires were fabricated using a SiSn sputtering target with a Sn content of 6 at% and a sputtering-target-to-substrate distance of 20 mm. (a) TEM images of nanowires and TEM–EDX mapping images of Si (blue) and Sn (green); the He gas pressure was 100 mTorr. (b) TEM images of nanowires and TEM–EDX mapping images of Si (blue) and Sn (green); the He gas pressure was 300 mTorr. (c) XRD patterns of Si/Sn nanowires fabricated at a He gas pressure of 100 and 300 mTorr.