Table 1 Experimental results for HfOx and TaOx devices.
Material | CC (µA) | Pulse Amp. (V) | Number of states | P. noise | Conductance (µS) | Accuracy (%) | |||||
|---|---|---|---|---|---|---|---|---|---|---|---|
V+ | V− | Avg | SD | Max | Off | On | D.R | ||||
HfOx | 200 | 1.2 | 1.0 | 12 | 0.87 | 14 | 0.75 | 76.9 | 143 | 1.86 | 29.4 |
1.2 | 1.1 | 12 | 1 | 14 | 0.73 | 32.3 | 143 | 4.43 | 82.3 | ||
350 | 1.1 | 1.1 | 23 | 3 | 28 | 0.72 | 45.5 | 200 | 4.2 | 87.4 | |
1.2 | 1.1 | 29 | 4 | 36 | 0.73 | 37.0 | 200 | 5.4 | 89.7 | ||
500 | 1.1 | 1.1 | 20 | 2.8 | 23 | 0.68 | 100 | 213 | 2.1 | 90.5 | |
TaOx | 200 | 1.4 | 1.3 | 11 | 1.2 | 14 | 0.68 | 10.9 | 100 | 9.2 | 92.9 |
350 | 1.3 | 1.3 | 18 | 2.98 | 23 | 0.73 | 17.0 | 128 | 7.8 | 89.1 | |
1.4 | 1.3 | 27 | 1.1 | 29 | 0.81 | 8.5 | 57.5 | 6.8 | 84.1 | ||
500 | 1.3 | 1.3 | 20 | 0.6 | 21 | 0.74 | 3.82 | 167 | 43.7 | 90.7 | |
1.4 | 1.3 | 35 | 1.2 | 37 | 0.75 | 9.8 | 179 | 18.2 | 96.4 | ||
