Figure 3
From: Picosecond to microsecond dynamics of X-ray irradiated materials at MHz pulse repetition rate
Carrier density, n, (left) and carrier temperature, \(T_e\), (right) in silicon at \(t=0\) µs (top) and at \(t=1\) µs (bottom). The parameters of the simulation are the same as in Fig. 2. Note, that at \(t=1\) µs, the electron and atomic temperatures are equal.
