Figure 2
From: Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission

Structural characterization of MQWs samples. (a) The SIMS profiles of samples A1, A2, and A4 showing the Sn and Si compositions. (b) The XRD (\(\overline{2 }\overline{2 }4\)) RSM of sample B4 showing the coherent growth of MQWs on strain-relaxed GeSn SRE and (c) The (\(004\)) 2θ/ω scan displaying satellite peaks (SLn) related to the periodicity of the ten-period MQWs structure.