Table 3 Comparison of chip temperatures for different peak surge currents, illustrating the impact of increased chip thickness and increased active area of the MPS diode.

Peak surge-current

(A)

Chip temperature (°C)

\({t}_{SiC}=110 \;\mathrm{\mu m}\)

\({A}_{ac}=8.6\;\mathrm{ m}{\mathrm{m}}^{2}\)

\(\left(R=20.0\;\mathrm{ m\Omega }\right)\)

\({t}_{SiC}=350\;\mathrm{ \mu m}\)

\({A}_{ac}=8.6\;\mathrm{ m}{\mathrm{m}}^{2}\)

\(\left(R=25.6 \;\mathrm{m\Omega }\right)\)

\({t}_{SiC}=350 \;\mathrm{\mu m}\)

\({A}_{ac}=11.0\; {\mathrm{mm}}^{2}\)

\(\left(R=20.0\; \mathrm{m\Omega }\right)\)