Table 1 X-Ray diffraction pattern of fabricated P-Si layer.

From: Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

Substrate orientation

(hkl)

2 theta

(Degree)

Full width at half maximum

(Degree)

Crystallite size

(nm)

Interplanner spacing

(nm)

<200>

33.101

0.290

0.282

0.211

<400>

69.331

0.321

0.141

0.142

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