Figure 15 | Scientific Reports

Figure 15

From: Exploration of a wide bandgap semiconducting supramolecular Mg(II)-metallohydrogel derived from an aliphatic amine: a robust resistive switching framework for brain-inspired computing

Figure 15

A schematic diagram of the conductive filament model demonstrating the resistive switching mechanism of glass/ITO/Mg@TMA/Cu based device. Various points along the I–V curve has been marked as follows: (a) The migration of the Cu ions, Mg ions and oxygen vacancies towards the intermediate layer after the application of the positive voltage of 0.2 V, (b) LRS state in which conducting filament type structure formed with Cu ion, Mg ions, oxygen vacancies at 3.8 V, (c) Rupture of the conducting filament in RESET process and Cu ions, Mg ions, oxygen vacancies are going back to the top electrode by the application of negative voltage of − 5 V, (d) All ions are accumulated in the top electrode and switch to HRS at − 0.2 V. A comparison of ION/IOFF observed in other material at room temperature (shown in Table 1).

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