Figure 1 | Scientific Reports

Figure 1

From: Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Figure 1

Schematic illustration of the oxidation mechanism by an oxidizer on the (a) Si-face and (b) C-face of SiC. (c) Tafel plots comparing Si-face and C-face. (d) and (e) Cyclic voltammetry (CV) results with Ag/AgCl reference electrode on Si-face and C-face, respectively. (f) Hysteresis loop area (V) obtained from CV measurements. (g) and (h) Chronoamperometry results on Si-face and C-face, respectively. (i) Current density over time for each orientation direction at a voltage of 2.5 V. (j) Composition of the oxide layer at positions ① to ⑤ in (i).

Back to article page