Figure 3 | Scientific Reports

Figure 3

From: Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Figure 3

(a, c) AFM measurements show the topography and fine particle boundary of the Si-face and C-face, respectively. (b, d) Lateral force (friction force) measurements on Si-face and C-face. (e) Coefficient of friction (COF) of the oxide layer for each orientation direction of SiC. (f) Young's modulus and hardness measurements of the oxide layer in each orientation direction of SiC.

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