Table 1 Selected recent major findings in VO2 based systems.
System’s Configuration | Investigated major phenomena & properties | References |
|---|---|---|
VO2 Single crystal | Sliding twin-domains in self-heated needle-like VO2 single crystals | |
VO2 Strained thin films | Mott transition in chain structure of strained VO2 films revealed by coherent phonons | |
Single-crystal VO2 nanobeams | Measurement of a solid-state triple point at the metal–insulator transition in VO2 | |
VO2 Single crystal | Observation of a large non-thermal contribution to picosecond train pulse generation using the photo-induced phase transition in VO2 | |
VO2 Single crystal | Elucidating the inhomogeneity of the ultrafast insulator-to-metal transition dynamics of VO2 | |
VO2 Single crystal | Clarification of the transient dynamics of the phase transition in VO2 revealed by mega-electron-volt ultrafast electron diffraction | |
W-doped VO2 thin films | observation of the magnetic-field-induced insulator–metal transition in W-doped VO2 at 500 T | |
VO2 epitaxial thin films | demonstration of the reversible phase modulation & hydrogen storage in multivalent VO2 epitaxial thin films | |
TixV1-xO2 nanopowders | Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti4+) Doping | |
VO2 Thin films | Photo-induction in non-volatile VO2 phase transition for neuromorphic ultraviolet sensors | |
VO2 ultrathin films on Si3N4 membranes | Ultrafast X-ray imaging of the light-induced phase transition in VO2 | |
VO2 Single crystal | Demonstration of the reversible switching between pressure induced amorphization and thermal-driven recrystallization in VO2(B) nanosheets | |
ultrathin VO2 channels | Validation of the positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics |
