Table 1 Fitting parameters n and A extracted using (a) Eqs. (6) and (7) for Fig. 4, and (b) Figure Eq. (5) for Fig. 9.

From: Band-offsets scaling of low-index Ge/native-oxide heterostructures

Substrate

n

A (nm/min0.25)

(a)

Ge(110)

0.25

0.096 ± 0.009

Ge(111)

 

0.084 ± 0.008

Ge(001)

 

0.116 ± 0.010

(b)

Ge(110)

0.25 ± 0.01

0.095 ± 0.008

Ge(111)

 

0.083 ± 0.007

Ge(001)

 

0.115 ± 0.010