Figure 3
From: Strain-dependent grain boundary properties of n-type germanium layers
Raman spectroscopy analysis of the samples. (a) Raman spectra of the samples after annealing, where the crystal Ge peak position for a sc-Ge wafer is shown as a dotted line. The FWHM values of the Ge peaks are shown near each spectrum. (b) Δω and ε as functions of Δα, where ε > 0 corresponds to tensile strain and ε < 0 corresponds to compressive strain. The dotted line shows εth obtained from Eq. (1).
