Table 1 Coefficients of thermal expansion (CTEs) and CTE differences between Ge and substrate (Δα) at room temperature.
From: Strain-dependent grain boundary properties of n-type germanium layers
Substrate | CTE [10–6 K–1] | Δα [10–6 K–1] |
|---|---|---|
SiO2 | 0.5 | –5.3 |
Si | 3.9 | –1.9 |
CaF2 | 18.9 | 13.1 |
PI | 27.0 | 21.2 |
