Figure 4

Plasma etching rate of c-axis sapphire, Y2O3 polycrystalline ceramics and Y2O3-YAM composites with different volume ratios under a variety of mixed gas ratios between CF4, Ar and O2 conditions.

Plasma etching rate of c-axis sapphire, Y2O3 polycrystalline ceramics and Y2O3-YAM composites with different volume ratios under a variety of mixed gas ratios between CF4, Ar and O2 conditions.