Table 2 Details of plasma etching conditions.

From: Microstructural characterization and inductively coupled plasma-reactive ion etching resistance of Y2O3–Y4Al2O9 composite under CF4/Ar/O2 mixed gas conditions

 

Conditions

Samples

Sapphire, Y2O3, Y2O3-YAM composite

ICP power (frequency)

1.5 kW (13.56 MHz)

Bias voltage (frequency)

600 V (2 MHz)

Plasma gas

CF4, Ar, O2

Pressure

20 mTorr

Etching time

60 min

Electrode distance

152 mm

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