Figure 2 | Scientific Reports

Figure 2

From: Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Figure 2

Schematics and performances of our fabricated FeCaps and FeFET. (a) High-resolution transmission electron microscopy (HR-TEM) images of FeCaps having a 4.5-nm HZO layer without an IL (left) and with 1-nm \(\text {ZrO}_{2}\) IL (right). Polarization-electric field plots of the FeCaps having different IL materials along with 4.5-nm HZO (annealing temperature was 350 \(^{\circ }\)C). Without IL, the HZO layer remained as paraelectric material under the given annealing temperature. Simulation model fitting results with 9.5-nm and 4.5-nm HZO thicknesses devices. (b) Optical microscope image of our fabricated die. Fitted FeFET transfer curve obtained from the simulation model compared with the experimental data (inset: Scanning Electron Microscope (SEM) image).

Back to article page