Figure 6
From: Lens-free reflective topography for high-resolution wafer inspection
Implementing high-resolution topography on the AFM test target. (a) and (b) Reconstructed phase images in the absence and presence of speckle illumination, respectively. (a) has a narrow FOV of 0.8 × 0.8 mm2, whereas (b) has a wide FOV of 1.8 × 1.8 mm2. The magnified images of the regions indicated by the black boxes in (a) and (b) are shown in (c) and (d), respectively. (e) Cross sectional layout of the AFM test target. A regular pattern of SiO2 is fabricated on a flat Si substrate. The height \(h\) of the designed SiO2 is 100 nm. (f) 3D surface plot of the region indicated by the red box in (b). (g) Line plot graph of the positions indicated by the black dotted lines in (c) and (d) Evidently, the line-space patterns with a spacing of 2.5 μm are resolved when a diffuser was presented.
