Figure 4
From: Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

Schematic of short fail mechanism during ac stress with (a) initial condition and after (b) t1, (c) t2, and (d) t3 in Fig. 2a.
From: Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)

Schematic of short fail mechanism during ac stress with (a) initial condition and after (b) t1, (c) t2, and (d) t3 in Fig. 2a.