Figure 5
From: Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)
(a) Mixed-mode TCAD simulation pulse setup, (b) electron concentration distribution with − 30 V-Vlow and (c) electric field distribution at Vhigh, Vlow, and falling/rising edges in channel region along to source-drain direction. The inset of (c) shows the electric field with the different Vlow, which corresponds to Fig. 2a,b, and c; − 30 V (purple), − 20 V (navy), − 10 V (wine).
