Figure 6
From: Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT)
The schematics of (a) bias condition (VGS and VDS), ID, and electron concentration of IGZO TFT with initial pulse and the next pulse applied with short falling time (green line) and long falling time (indigo line), (b) FBE in IGZO TFT at the t1 (i.e., VGS and VDS change from Vhigh to 0 V; tf,high) which occurs regardless of falling time. The schematics of IGZO TFT during the (c) short falling time (t2) and (d) long falling time (t3).
