Figure 5
From: A high-resolution large-area detector for quality assurance in radiotherapy
Radiation hardness of dual gate TFTs. (a–c) Id–Vg transfer characteristics before (grey), after irradiation (red) with 0.5, 29 and 250 kGy 18 MeV protons respectively, and after compensation of the Von shift (green) by applying a bottom gate bias of − 4, − 13 and − 40 V respectively. (d) Id–Vg transfer characteristics before (grey), after irradiation (red) with 29 kGy 18 MeV protons, and after recovery by a thermal annealing process for 1 h at 165 °C (green).
