Table 2 The result of the contact resistance between the electrode and P-GaN.

From: Enhanced contact performance of high-brightness micro-LEDs via ITO/Al anode stack and annealing process

Micro-LED sample label

Electrode structure

Specific contact resistivity with P-GaN

A

ITO/Ti/Al/Ni/Cr/Pt/Au (100/50/350/100/500/500/5000 Å)

7.803 × 10−4 Ω cm2

B

Ti/Al/Ni/Cr/Pt/Au (50/350/100/500/500/5000 Å)

4.682 × 10−3 Ω cm2

C

ITO/Ti/Ni/Cr/Pt/Au (100/50/100/500/500/5000 Å)

5.689 × 10−1 Ω cm2

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