Table 1 Dimensions of the submillimeter channel devices before and after sintering.
Designed | Printed | Sintering condition | ||||
|---|---|---|---|---|---|---|
1130 °C, 6 h | 1135 °C, 6 h | 1135 °C, 12 h | 1140 °C, 6 h | |||
Device width | 19.00 | 19.10 | 15.74 (17.6%) | 15.65 (18.1%) | 15.52 (18.7%) | 15.56 (18.5%) |
Device length | 29.50 | 29.54 | 24.09 (18.4%) | 23.88 (19.2%) | 23.87 (19.2%) | 23.71 (19.7%) |
Device thickness | 9.50 | 9.75 | 7.82 (19.8%) | 7.56 (22.4%) | 7.57 (22.3%) | 7.66 (21.4%) |
Channel height | 2.00 | 2.11 | 1.63 ± 0.035 (22.7%) | 1.53 ± 0.017 (28.9%) | 1.75 ± 0.016 (17.1%) | 1.50 ± 0.015 (27.5%) |
Channel width | 0.60 | 0.62 | 0.51 ± 0.093 (17.7%) | 0.50 ± 0.045 (19.4%) | 0.54 ± 0.018 (12.9%) | 0.50 ± 0.043 (19.4%) |