Table 2 Material parameters of \({\hbox {MoS}}_{2}\) at \(T=300\) K used in our simulations.

Energy bandgap⁵²

\(E_\text{g}\)

1.87 eV

Electron’s effective mass⁵³

\(m_\text{e}^*\)

0.35\(m_0\)

Hole’s effective mass⁵³

\(m_\text{h}^*\)

0.50\(m_0\)

Electron affinity⁵⁴

\(\chi _i\)

4.27 eV

Radiative recombination coefficient⁵⁵

\(B_\text{r}\)

\(10^{-7} \mathrm \; cm^3/s\)

Auger coefficient⁵⁵

\(C_\text{n},C_\text{p}\)

\(10^{-24} \mathrm \; cm^6/s\)

Density of states in conduction band⁵⁶

\(N_\text{C}\)

\(3.76 \times 10^{11} \mathrm \; cm^{-2}\)

Density of states in valence band⁵⁶

\(N_\text{V}\)

\(5.76 \times 10^{11} \mathrm \; cm^{-2}\)

Hole saturation velocity⁵⁷

\(v_\text{p,sat}\)

\(1 \times 10^7 \mathrm \; cm/s\)

Electron saturation velocity⁵⁷

\(v_\text{n,sat}\)

\(4.2 \times 10^6 \mathrm \; cm/s\)

Electron lifetime³⁸

\(\tau _\text{n}\)

\(1 \times 10^{-9} \mathrm \; s\)

Hole lifetime³⁸

\(\tau _\text{p}\)

\(1 \times 10^{-8} \mathrm \; s\)