Table 4 Thick target yields and impurity level in the production of 72As using 96.4% enriched 72Ge target.
Energy range (MeV) | Thick target yield (MBq/µAh)72As | Thick target yield (MBq/µAh)71As | Percentage impurity % (71As) | Percentage impurity % (73As) | Percentage impurity % (74As) |
|---|---|---|---|---|---|
14 → 7 | 272.1 | 0.0 | 0.0 | ˂ 0.05 | ˂ 0.01 |
15 → 7 | 310.3 | 2.7 | 0.8 | ˂ 0.05 | ˂ 0.01 |
16 → 7 | 340.7 | 8.8 | 2.6 | ˂ 0.05 | ˂ 0.01 |
18 → 7 | 380.8 | 28.1 | 7.4 | ˂ 0.05 | ˂ 0.01 |
22 → 7 | 419.7 | 83.8 | 19.9 | ˂ 0.05 | ˂ 0.01 |
25 → 7 | 434.1 | 119.2 | 27.5 | ˂ 0.05 | ˂ 0.01 |
22 → 7 (Spahn et al. 2007) using natGe | 114.1 | 28.1 | 24.6 | ||
22 → 7 (Dimitriev 1981) using natGe | 135 | 32 | 23.7 |
