Fig. 1
From: Defect engineering in organic semiconductor based metal-dielectric photonic crystals
Schematic representation of typical three-cavity MDPC device designed by stacking three-layer microcavity with alternating Ag and \(\hbox {Alq}_{3}\) layers. (a) and (b) represent the schematics of MDPCs with the defect introduced in a dielectric (\(\hbox {Alq}_{3}\)) layer of center and edge cavity respectively. All mirrors are 20 nm thick and the thickness of standard or static organic layer is 350 nm. Defect percentages were varied from -98% to +100% (\(0.02\le r \le 2\)) of standard size (350 nm) with the step of 1%. Inset shows the schematic of a single unit cell which is defined as a single microcavity. (c) Cross-sectional SEM image of an \(N = 3\) MDPC device with \(r = 1.50\) in center cavity, taken at a \(45^{\circ }\) angle using secondary electron detector, prepared by focused ion beam.
