Fig. 3
From: Identifying and understanding the nonlinear behavior of memristive devices
The interface-type switching in (a)–(d) BFO and (e)–(h) DBMD devices, including capacitive and inertia effects. (a), (e) The simulated I–V curves with and without the capacitive effects.; (b), (f) the source voltage and change in impedance; (c), (g) the change in capacitive reactance and (d), (h) the absolute average mobility and absolute drift velocity of all mobile oxygen vacancies in BFO and mobile oxygen ions in DBMD memristive devices.
