Fig. 2

(a) Memristor model schematic representation. I and V represent te current flowing through the device and the voltage applied. As described in the text these change over time due to the changes of its resistance (memristance), based on the momenta of both parameters (i.e. q(t) and \(\varphi (t)\)). (b) Simple representation of the connections of a cell in a CA. In the depicted case the state of the cell \(y_{i,j}\) is dependant from its actual state, the states of a neighbourhood \(N_n=9\) and external inputs (indexed as \(u_{i+g,j+l}\)) according to Eq. (3).