Fig. 4

Relative intensity of the (220) Bragg peak of the 30-nm thick Si film after laser-excitation with a fluence above the damage threshold is shown as a function of time. Points refer to the experiment and lines correspond to our calculations. The solid line represents the full calculation including the influence of the excited PES & EPC. Notice the excellent agreement with experiment. The dotted line refers to the calculated values using the constrained simulations only including excited PES. The dashed line corresponds to the calculated values considering only the effect of the EPC. The experimental values are taken from Fig. 3 (c) of Ref.29.