Table 1 Input parameters of different materials used to simulate PSCs.

Thickness “t” (nm)

500

30

400

200

Band gap “E_g” (eV)

3.5

3.2

2.25

2.88

Electron affinity “\(\:\chi\)” (eV)

4

4

3.79

2.05

Dielectric permittivity “ε_r”

9

9

5.8

3

CB effective density of state “N_c” (cm⁻³)

2.2 × 10¹⁸

1 × 10¹⁸

1.8 × 10¹⁸

2.2 × 10¹⁸

VB effective density of state N_v (cm⁻³)

1.8 × 10¹⁹

1.8 × 10¹⁹

1 × 10¹⁸

1.8 × 10¹⁹

Thermal velocity of electron “V_e” (cm/s)

1 × 10⁷

1 × 10⁷

1 × 10⁷

1 × 10⁷

Thermal velocity of hole “V_h” (cm/s)

1 × 10⁷

1 × 10⁷

1 × 10⁷

1 × 10⁷

Electron mobility “µ_e” (cm²/Vs)

20

20

0.37

2 × 10⁻⁴

Hole mobility “µ_h” (cm²/Vs)

10

10

0.37

2 × 10⁻⁴

Shallow donor density “N_D” (cm⁻³)

2 × 10¹⁹

9 × 10¹⁸

1 × 10¹⁵

-

Shallow acceptor density

“N_A” (cm⁻³)

-

-

1 × 10¹⁵

2 × 10¹⁹

Defect density “N_t”

(cm⁻³)

10¹⁵

10¹⁵

1 × 10¹⁵

1 × 10¹⁵