Fig. 1
a Schematic of Pd/Ta2O5/TaOx/Pd bilayer memristor device. At the initial state, we assume a uniform doping concentration of nD = 1 × 1022 cm−3 within the conductive TaOx layer, which serves as the oxygen vacancy (VO) reservoir. The simulation utilizes dimensions of W = 40 nm, h = 10 nm, and d = 20 nm. Here, V1 represents the voltage applied to the CML while V2 represents the effective voltage applied to the memristor’s TE. b Measured and simulated dc I–V characteristics of the memristor device with ICC = 500 µA, illustrating the forming switching cycle. c 2D maps of nD were obtained in the model for forming and first RESET.
