Fig. 6
From: Scalable synthesis of millimeter-long single crystal Ta2Ni3Se8 Van der Waals nanowires
Electrical characterization of Schottky devices made on TNS nanowire. (a) Optical image of TNS 2T devices fabricated from a single TNS nanowire. (b) SEM image of the M-S-M device marked in the green dashed box in (a) with a channel length of 1.5 μm. The inset shows the schematic of an M-S-M device structure. (c) Experimental I–V characteristics of TNS nanowire devices with different channel lengths (empty squares) and the fitting with the M-S-M model (solid lines). (d) Extracted Schottky barrier heights for devices with different TNS nanowires.
