Fig. 6
From: A tight binding study of electron transport in notched graphene nanoribbons
Local density of states and electron transmission in notched ZGNRs. LDOS calculations for prototype nanoelectronic devices based on g-GNR (A), asymmetric ch-GNR (B), and the symmetric ch-GNR (C–E). All LDOS calculations are performed when the three hopping parameters are turned on. The LDOS calculations in A, B, and D are taken at the Fermi energy. The LDOS in (C) is taken at the top of the upper band of the symmetric ch-GNR structure, i.e. at \(\sim\) 0.69 eV, while the LDOS in (E) is at the bottom of the lower band, i.e., at \(\sim -0.75\) eV. The red and orange arrows denote the second- and third-nearest neighbour hopping, and the vertical dashed lines mark the GNR-lead interface.
