Table 1 Parameters, variables and values used in the proposed HJ-DD-UTFET and A-SD-HJ-DD-UTFET devices.

Length of source, channel and drain

L_S, L_CH, L_D

20 nm each

20 nm each

Thickness of body, drain and drain oxide

T_B, T_D, T_DOX

10 nm, 10 nm, 0 nm (T_B = T_D)

10 nm, 6 nm, 2 nm

Thickness of gate, SiO₂, HfO₂

T_G, T_OX1, T_OX2

1 nm each

1 nm each

Length of PG, TG, AG, spacer

L_PG, L_TG, L_AG, L_SP

17 nm, 10 nm, 10 nm, 3 nm

17 nm, 15 nm, 5 nm,

3 nm

Uniform doping concentration

N_D

1 × 10 ¹⁹ cm ⁻³

1 × 10 ¹⁹ cm ⁻³

Work function of PG, TG, AG

Φ_PG, Φ_M1, Φ_M2

5.93 eV, 5.1 eV, 4.9 eV

5.93 eV, 5.1 eV, 4.9 eV