Table 2 Comparison of electrical characteristics of various JLTFET devices.

From: Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein

Device name

Gate/Channel length (nm)

Control gate work function (eV)

VD (V)

VG (V)

ON current (A/µm)

OFF current (A/µm)

SS (mV/dec)

Refs.

DMCG-JLTFET

20

4.1, 4.8, 4.1

1

1

~ 10–7

~ 10–17

-

40

DDG-GOHJLTFET

20

4.5

1.5

1.5

1.36 × 10–4

1.81 × 10–16

30.8

79

HMG-HJLTFET

20

4.1, 4.5

1.5

1.5

1.06 × 10–4

~ 10–16

26.2

46

DO-DMG-JL-TFET

50

4.7, 4.6

1

1.2

7.6 × 10–6

2.8 × 10–17

36.12

47

DO-ED-JL-TFET

50

4.72

0.5

1

~ 10–5

~ 10–16

42.7

55

P + pocket HJLTFET

30

4.7

1

1

1.80 × 10–4

~ 10–11

42.3

43

VDL-DG-JLFET

20

4.9

0.1

1

~ 10–3

~ 10–13

68

50

DMS-CP-JL-TFET

50

4.7

0.5

1

7.63 × 10–7

2.03 × 10–17

12.74

45

SON-ED-JLTFET

20

4.17

1

1.2

6.11 × 10–7

3.54 × 10−18

15.133

56

DMG-HJLTFET

20

4.5

1.5

1.5

8.85 × 10–5

2.90 × 10–16

13.8

80

DMG-H-JLTFET

30

4.7, 4

1

1.2

~ 10–3

7.80 × 10–14

29

39

HJ-DD-UTFET

20

5.1, 4.9

1

2

2.01 × 10–4

4.44 × 10–13

15.57

This work

A-SD-HJ-DD-UTFET (Reported work)

20

5.1, 4.9

1

2

2.3 × 10–4

8.12 × 10–17

14.56

  1. DMCG-JLTFET - Dual Material Control Gate JLTFET, DDG-GOHJLTFET - Dual Dielectric Gate-Gate Overlap Heterostructure JLTFET, HMG-HJLTFET - Hetero Metal Gate-Heterostructure JLTFET, DO-DMG-JL-TFET - Dual Oxide Dual Material Gate JLTFET, DO-ED-JL-TFET - Dual Oxide Electrically Doped JLTFET, VDL-DG-JLFET - Vertical Dopingless Double Gate FET), DMS-CP-JL-TFET - Dual Meta Strip Charge Plasma based JLTFET, SON-ED-JLTFET - Silicon On Nothing Electrostatically Doped JLTFET, DMG-HJLTFET - Dual Metal Gate Hetero-material JLTFET.
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