Table 3 Comparison of analog/RF Figure of Merits (FOMs) of various JLTFET devices.

From: Enhanced RF analog linearity in metal gate modulated heterojunction based uniform TFET for label-free detection of dengue NS1 protein

Device name

Materials used

ION/IOFF ratio

gm (µS)

fT (GHz)

GBP (GHz)

Device efficiency (TGF) V-1

TFP (THz/V)

Refs.

DMCG-JLTFET

Si

~ 1010

~ 1.05

~ 0.79

0.085

~ 75

~ 0.036

40

DO-DMG-JL-TFET

Si

2.7 × 1011

40.5

2

0.2

-

-

47

DO-ED-JL-TFET

Si

3.32 × 1011

~ 44

2.5

0.25

-

-

55

P + pocket HJLTFET

Ge/Si

1.80 × 107

170

100

118

-

-

43

SON-ED-JLTFET

Si

1.72 × 1011

3.227

-

1

~ 90

0.055

56

DMG-HJLTFET

InAs/GaAs

3.1 × 1011

370

-

-

-

-

80

DMMG-HJLTFET

Ge/Si/Si + GaAs

1.56 × 1013

11.1

9.17

0.17

-

-

44

DMG-H-JLTFET

Ge/Si

1.2 × 1010

280

-

-

-

-

39

HJ-DD-UTFET

Si/GaAs

4.52 × 108

480

138

84.2

132

1.78

This work

A-SD-HJ-DD-UTFET

Si/GaAs

2.83 × 1012

536

187

248

163

2.30

  1. DMCG-JLTFET - Dual Material Control Gate JLTFET, DO-DMG-JL-TFET - Dual Oxide Dual Material Gate JLTFET, DO-ED-JL-TFET - Dual Oxide Electrically Doped JLTFET, SON-ED-JLTFET - Silicon on Nothing Electrostatically Doped JLTFET, DMMG-HJLTFET - Dual Metallic Material Gate Heterostructure JLTFET, DMG-HJLTFET - Dual Metal Gate Hetero-material JLTFET.
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