Table 2 Material parameters (derived from experimental and standard data).

From: Influence of deposition technique on the structural and optical properties of CuS thin films for hole transport layers

Layer

Band gap (eV)

Electron affinity (eV)

Dielectric constant

Mobility (cm²/Vs)

Thickness (nm)

FTO

3.5

4.4

9.0

20

50

SnO₂ (ETL)

3.9

4.2

10.0

25

200

MAPbBr₃ (Absorber)

2.3

3.9

25.0

3

400

CuS (HTL)

3.1/3.2

4.9

10.5

5

200

Au (Back Electrode)

100