Table 3 GIDL comparison of SOI FET and NC SOI FET.

From: Engineering the ferroelectric polarization to optimize the GIDL and negative output conductance in negative capacitance FET

 

SM NC SOI FET (IGIDL)

SM SOI FET (IGIDL)

VDS = 0.1 V

VDS = 0.9 V

VDS = 0.1 V

VDS = 0.9 V

VGS = − 0.3 V

9.5e − 10 A

9.5e − 9 A

9.73e − 13 A

2.22e − 9 A

VGS = 0 V

2.57e − 10 A

5.26e − 9 A

7.39e − 11 A

2.79e − 9 A

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